3sk41 Datasheet Jun 2026

The 3SK41 is housed in a standard , offering robust RF shielding and thermal dissipation. The typical pin orientation, when looking at the bottom of the transistor lead layout with the alignment tab pointing downwards, is configured as follows: Pin 1: Source (S) & Case grounding. Pin 2: Drain (D) . Pin 3: Gate 2 ( G2cap G sub 2

Its dual-gate design allows for efficient automatic gain control (AGC) or local oscillator injection without compromising stability. Sourcing & Replacements

Because original components from NEC or Motorola are increasingly difficult to source outside of "New Old Stock" (NOS) channels, cross-referencing equivalent parts is often necessary for repair and restoration work. Original Device Replacement Drop-in / Near Equivalent Package Type Primary Application Target 3SK45 CAN-4 / TO-72 Low-Noise RF Amplifier 3SK41 CAN-4 / TO-72 VHF/UHF Preamplification 3SK41 High-Gain RF/IF Stages 3SK41 SOT-143 (SMD) Modern Surface-Mount RF Tuners

The following specifications are common for the 3SK41 dual-gate MOSFET: N-channel dual-gate MOS field-effect transistor. Package: Typically found in a CAN-4 (metal can) package.

If you are maintaining vintage communications gear, restoring old television tuners, or studying legacy RF design, understanding the 3SK41 datasheet is essential. This article breaks down its core specifications, pin configuration, and practical application parameters. 1. Key Features and Applications 3sk41 datasheet

The is a legacy N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily designed for high-frequency applications, such as VHF (Very High Frequency) amplifiers and mixers in radio and television tuners. Core Specifications

Encapsulated in a CAN-4 metal package for improved heat dissipation and shielding. Breakdown Voltage ( Vbrcap V sub b r end-sub GSS): Approximately 7.0V . Maximum Power Dissipation ( PDcap P sub cap D ): Up to 250mW . Forward Transfer Admittance ( gfsg sub f s end-sub ): Minimum 8.0 mS (millisiemens). Input Capacitance ( Cisscap C sub i s s end-sub ): Maximum 5.0 pF . Understanding the Dual-Gate Advantage

To achieve the low noise figure and high gain specified in the datasheet, design accurate LC matching networks for both the input (Gate 1) and output (Drain).

Employed in radio stages to reduce internal noise and prevent front-end overload. The 3SK41 is housed in a standard ,

) (Typically used for Automatic Gain Control or Local Oscillator injection). (Primary RF signal input). Architectural Advantages & Dynamic Performance

(Adjust resistor and choke values to meet the datasheet’s recommended bias point where gm is adequate and ID within limits.)

: This architecture allows for independent control over gain and signal, making it a favorite for automatic gain control (AGC) in radio circuits.

For modern designs, consider upgrading to a BF998 or MMBF4416. For restoration, treat a NOS 3SK41 as a precious artifact—and handle it with electrostatic reverence. Pin 3: Gate 2 ( G2cap G sub

VGS(off)cap V sub cap G cap S open paren o f f close paren end-sub

The output terminal where the amplified RF signal is collected.

The primary RF signal input. This gate controls the main channel conduction.

TO-72 / CAN-4 Pinout (Bottom View) (Case/Shield) [Pin 4] (Gate 2) o o (Gate 1) [Pin 3] [Pin 1] o o (Drain) (Source) [Pin 2] [Pin 5 / Tab]